CSD17313Q2
The -12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection
G66This –12-V, 97-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.
CSD23280F3
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 0.7 mm, 116 mOhm, gate ESD protection
CSD23280F3
Features for the CSD23280F3
- Low On-Resistance
- Ultra-Low Qg and Qgd
- High-operating drain current
- Ultra-small footprint
- 0.73 mm × 0.64 mm
- Ultra-low profile
- 0.36-mm max height
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
4.9
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Score Excellent
★ ★ ★ ★ ★ 16/08/2024
Good service!
(156)
★ ★ ★ ★ ★ 23/07/2024
Good!
(982)
★ ★ ★ ★ ★ 23/07/2024
Good quality!
(982)